C_2H_2流量对SiCN薄膜结构及阻挡性能的影响  

Influence of C_2H_2 Flow Rate on Microstructures and Electronic Properties of SiCN Diffusion Barriers

作　　者：张治超[1] 周继承[1] 彭银桥[1] 

机构地区：[1]中南大学,长沙410083

出　　处：《真空科学与技术学报》2011年第3期272-277,共6页Chinese Journal of Vacuum Science and Technology

基　　金：湖南省科技计划重大专项(No.08FJ1002)

摘　　要：采用C2H2和N2作为反应气体、多晶Si作为靶材,利用射频磁控溅射系统沉积了SiCN薄膜。利用傅里叶红外光谱仪、X射线衍射仪、四探针测试仪等研究了C2H2流量对薄膜结构、介电常数以及阻挡性能的影响。结果表明,薄膜为非晶结构,1000℃退火下未出现结晶,稳定性很好;随着C2H2流量的增大,薄膜表面颗粒呈现增大趋势;C原子取代Si原子占据薄膜中的网络位置,薄膜形成了以C-N键为主的网络结构;制得的SiCN薄膜介电常数在4.2~5.8之间,C,N含量以及薄膜结构是影响介电性能的关键因素,高温使得Cu穿过薄膜中的缺陷与Si发生互扩散是薄膜阻挡性能失效的主要原因。The SiCN films were grown by RF reactive magnetron sputtering with acetylene and nitrogen as the reactive gases,and polycrystalline silicon as the target material.The impacts of the film growth conditions,including the C2H2 flow rate,annealing temperature on the properties of the SiCN film were studied.Its microstructures and electronic properties were characterized with Fourier transform infrared spectroscopy,X-ray diffraction,and conventional surface probes.The results show that the C2H2 flow rate and annealing temperature strongly affect its microstructures,dielectric constant and diffusion barrier efficiency.For instance,as C2H2 flow rate increases,the grain size on surfaces of the highly stable,amorphous SiCN film increases.The C-N bonds dominate the surface matrix possibly because of substitution of Si for C atom.Its dielectric constant was estimated to be 4.2～5.8,depending on contents C and N,and on defect-density of the films.We found that high temperature inter-diffusion and reaction of Cu and Si are responsible for the breakdown of the SiCN diffusion barrier

关 键 词：射频磁控溅射 SICN C2H2 结构 阻挡性能 

分 类 号：O469[理学—凝聚态物理] O613.7[理学—电子物理学]