ZnO纳米线阵列湿度传感器研究  

Characterization of Highly-Aligned ZnO Nanowire Arrays and Its Application in Humidity Sensors

作　　者：顾磊磊[1] 郑凯波[1] 孙大林[1] 莫晓亮[1] 陈国荣[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2011年第3期352-356,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.20833009);上海市科学技术发展基金(No.09DZ1142102);上海市教育委员会科研创新项目(11ZZ02);教育部留学回国人员科研启动基金资助项目

摘　　要：采用水热法在Au/Ni叉指电极上原位生长出整齐的ZnO纳米线阵列。纳米线的平均直径和长度分别为50 nm和5μm,且沿[0001]方向高度择优生长。测试了基于纳米线阵列的湿敏器件对不同湿度电容和电阻响应,并分析了它的工作机制。实验结果表明,这些器件具有相对较大的灵敏度和较短的响应和恢复时间,从而说明ZnO纳米线阵列在湿敏领域有很好的应用前景。The highly-aligned ZnO nanowire arrays with c-axis preferred growth orientation along were fabricated in-situ by hydrothermal synthesis on the prefabricated,Au/Ni interdigitated electrodes.The impacts of the array fabrication conditions on microstructures of ZnO nanowires,and on configuration of the array were studied with X-ray diffraction,scanning electron microscopy,and high resolution transmission electron microscopy.The relationship between the relative humidity and its electrical properties was also evaluated.The results show that the ZnO nanowire arrays with favorable properties,including high sensitivity,fast response,and rapid recovery,are potential materials for humidity sensor fabrication.

关 键 词：ZNO纳米线阵列 湿度传感器 电容 电阻 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]