脉冲射频/40kV高压直接耦合等离子体离子注入电源系统研制  

Novel Power Supplies for Plasma Implantation by Direct Coupling of RF and 40 kV Pulsed Voltages

作　　者：巩春志[1] 田修波[1] 朱宗涛[1] 杨士勤[1] 

机构地区：[1]哈尔滨工业大学现代焊接生产技术国家重点实验室,哈尔滨150001

出　　处：《真空科学与技术学报》2011年第3期357-361,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.10975041;10905013);哈尔滨市科技创新人才研究专项基金(2006RFXXS012)

摘　　要：研制的用于等离子体浸没离子注入（PIII）的电源系统采用高压隔离与高频滤波技术,将40 kV高压脉冲电源与13.56 MHz射频电源直接耦合,由单一输出电缆连接到实验靶台上,通过射频与高压脉冲的时序控制,实现了40 kV的高压脉冲与脉冲射频交替输出。工作过程中,通过射频产生等离子体,而后施加高压脉冲获得离子注入,进而实现PIII与沉积。该电源系统的性能指标为：高压脉冲电压幅值10-40 kV,脉冲频率10-1000 Hz,射频脉冲宽度0.01-10 ms,射频与高压间隔0.1-10 ms,高压脉冲功率6 kW,射频脉冲功率1 kW。实验研究表明能够有效的实现PIII。本文将介绍该种新电源的设计思想、电路以及在内凹零部件（如管筒内壁）等离子体离子注入等方面的应用。A novel type of power supply for the plasma immersion ion implantation（PIII） system,capable of direct coupling of the RF pulsed-voltage and the pulses with amplitude up to 40 kV,has been successfully developed by integrating high voltage insulation and low pass filtering technologies.Electrically connected to the target via a single feed-through,the newly-developed power supply may generate RF pulses and high voltage pulses in an alternating way.The RF pulse for generating the plasma and the high voltage pulse for ion immersion and ion implantation are modulated by the time control unit.The specifications of the power supply include：peak voltage of 10～40 kV,pulse frequency of 1～1000 Hz,power of 6 kW;RF pulse width of 0.01～10 ms,RF power of 1 kW,and the mode switching time interval of 0.01～10 ms.The power supply was experimentally tested with satisfactory results.The design considerations,technical specifications,circuitry,and parts geometry of the power supply were also discussed.

关 键 词：脉冲射频 高压脉冲 直接耦合 等离子体离子注入 

分 类 号：TN224[电子电信—物理电子学]