Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm  

作　　者：GAO Yuzhu XU Baiqiao WANG Zhuowei GONG Xiuying FANG Weizheng 

机构地区：[1]School of Electronics and Information Engineering, Tongji University, Shanghai 201804, China [2]Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

出　　处：《Rare Metals》2011年第3期267-269,共3页稀有金属（英文版）

基　　金：the National Natural Science Foundation of China(No.60777022)

摘　　要：n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were successfully grown by one-step liquid phase epitaxy （LPE） tech-nology. Scanning electron microscopy （SEM） images and X-ray diffraction （XRD） patterns showed the mirror smooth surface, flat interface, and good crystalline quality of the heterojunctions. Fourier transform infrared （FTIR） transmittance spectra exhibited that the cutoff wave-lengths of InAsSb epilayers reach 4.8 μm. The standard current-voltage （I-V） characteristics with a high differential-resistance-area-product at zero bias （R0A） of 1.02×10-1 Ωcm2 at room temperature indicate that the fine p-n junctions have been obtained.n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were successfully grown by one-step liquid phase epitaxy （LPE） tech-nology. Scanning electron microscopy （SEM） images and X-ray diffraction （XRD） patterns showed the mirror smooth surface, flat interface, and good crystalline quality of the heterojunctions. Fourier transform infrared （FTIR） transmittance spectra exhibited that the cutoff wave-lengths of InAsSb epilayers reach 4.8 μm. The standard current-voltage （I-V） characteristics with a high differential-resistance-area-product at zero bias （R0A） of 1.02×10-1 Ωcm2 at room temperature indicate that the fine p-n junctions have been obtained.

关 键 词：HETEROJUNCTIONS liquid phase epitaxy current voltage characteristics WAVELENGTH 

分 类 号：TN818[电子电信—信息与通信工程] O657.33[理学—分析化学]