Co:CdS半导体纳米晶的合成、晶体结构及光学性质  

Synthesis,Crystal Structure and Optical Properties of Co:CdS Semiconductor Nanocrystals

作　　者：李园利[1] 谢瑞士[1] 余萍[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《广州化工》2011年第11期56-58,共3页GuangZhou Chemical Industry

基　　金：教育部新世纪优秀人才计划资助项目(NCET-07-0590);四川省应用基础研究资助项目(2008JY0039)

摘　　要：利用水相合成技术,以巯基乙酸(MAA)为稳定剂,合成了Co:CdS半导体纳米晶。XRD结果表明,得到的掺杂纳米晶为闪锌矿结构,平均粒径约为3.9 nm;FT-IR结果表明,MAA成功包覆在Co:CdS纳米晶的表面;UV-vis吸收谱表明,Co离子成功掺入CdS晶格中;PL结果表明,掺杂离子浓度过大会导致CdS发光淬灭;并讨论了相关机理。Co：CdS semiconductor nanocrystals were synthesized via aqueous synthesis technique using mercaptoaeetie acid （MAA） as capping agent. XRD results demonstrated the resulting nanocrystals were well retained in the zinc - blende strcture, and mean particle size was about 3.9 nm. MAA as ligand was successfully capped on the surface of Co ： CdS semiconductor nanocrystals and confirmed by FF- IR spectrum. The transition of Co2＋4A2 （F）→4T1 （P） was observed in UV -vis absorption spectra, which indicated the dopants were implanted into the host CdS lattice successfully. The luminescence quenching appeared when the doping concentration of Co ions was too high. The underlying physical mechanisms were discussed.

关 键 词：CDS 掺杂 半导体纳米晶 水相合成技术 光学性质 

分 类 号：O613.71[理学—无机化学]