一种新型微带曲折线慢波结构的设计  

Design of a New Microstrip Meander-Line Slow Wave Structure

作　　者：陈常婷[1] 宫玉彬[1] 沈飞[1] 魏彦玉[1] 王文祥[1] 

机构地区：[1]电子科技大学大功率微波电真空器件技术国防科技重点实验室,四川成都610054

出　　处：《真空电子技术》2011年第2期1-4,共4页Vacuum Electronics

基　　金：国家自然科学基金资助项目(No.60532010)

摘　　要：设计了一种新型微带曲折线慢波结构,该结构采用双介质杆支撑式的V型平面曲折线慢波电路。利用电磁场仿真软件HFSS对这种新型结构和传统微带曲折线慢波结构进行了分析比较,研究结果表明,新型微带曲折线慢波结构在不改变色散强弱的情况下,工作频段向高频端拓展且耦合阻抗有了很大提高,可以更好地工作在短毫米波段。并仿真分析了结构参数对高频特性的影响,所获得的仿真结果为器件的粒子模拟及计算慢波结构的工作效率奠定了基础。A new microstrip meander-line slow wave structure was designed,which uses the V-type plane meander-line slow wave circuit with twin dielectric-strips.The performances of the new microstrip meander-line slow wave structure and the traditional meander-line slow wave structure were compared by using of the electromagnetic simulation software HFSS.The effects of different structural parameters on the new structure were analyzed.The simulation results show that the new microstrip meander-line slow wave structure has a similar dispersion characteristic with the traditional structure,and the center frequency expands to the higher frequency,and the coupling impedance is greatly improved.Hence the new structure can work much better in millimeter wave band.The results lay a good foundation for particle-in-cell（PIC） simulation and efficiency caculation.

关 键 词：慢波结构 色散特性 耦合阻抗 几何参数 

分 类 号：TN124[电子电信—物理电子学]