Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device  

作　　者：吴剑 吕雪芹 金鹏 孟宪权 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences [2]Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University

出　　处：《Chinese Physics B》2011年第6期247-251,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, 60776037, and 10775106)

摘　　要：A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection （AR） coating. Tuning bandwidths of 106 nm and 117 nm are achieved under a-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection （AR） coating. Tuning bandwidths of 106 nm and 117 nm are achieved under a-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.

关 键 词：quantum dot external cavity laser broadband tuning 

分 类 号：TN312.8[电子电信—物理电子学] TN248