Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films  

作　　者：刘尧平 英敏菊 梅增霞 李俊强 杜小龙 A. Yu. Kuznetsovc 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences [2]College of Nuclear Science and Technology, Beijing Normal University [3]Department of Physics, University of Oslo

出　　处：《Chinese Physics B》2011年第6期356-360,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 61076007 and 50532090);the National Basic Research Program of China (Grant Nos. 2007CB936203, 2009CB929400, 2009AA033101, and 2011CB302002);the Knowledge Innovation Project of the Chinese Academy of Sciences;the Research Council of Norway through the FRINAT "Understanding ZnO" Project

摘　　要：In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 （L） peak in annealed high Sb＋ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of Sbzn-2Vz,, complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb＋ implanted samples is speculated to result from （Zn interstitials-O interstitials） Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb＋ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 （L） peak in annealed high Sb＋ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of Sbzn-2Vz,, complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb＋ implanted samples is speculated to result from （Zn interstitials-O interstitials） Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb＋ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.

关 键 词：ZNO ion implantation Raman spectra molecular beam epitaxy 

分 类 号：O484.1[理学—固体物理]