Finite Element Modeling of Hydrostatic Stress Distribution in Copper Dual-damascene Interconnects  

作　　者：袁光杰 陈冷 

机构地区：[1]School of Materials Science and Engineering University of Science and Technology Beijing

出　　处：《Journal of Shanghai Jiaotong university(Science)》2011年第3期302-306,共5页上海交通大学学报（英文版）

基　　金：the National Natural Science Foundation of China(No.50871016)

摘　　要：Hydrostatic stresses of copper dual-damascene interconnects are calculated by a commercial finite element software in this paper.The analytical work is performed to examine the effects of different low-k(k is permittivity)dielectrics,barrier layer and aspect ratio of via on hydrostatic stress distribution in the copper interconnects.The results of calculation indicate that the hydrostatic stresses are highly non-uniform throughout the copper interconnects and the highest tensile hydrostatic stress exists on the top interface of lower level interconnect near via.Both the high coefficient of thermal expansion and the low elastic modulus of the low-k dielectrics and barrier layer can decrease the highest hydrostatic stress on the top interface,which can improve the reliability of the copper interconnects.Hydrostatic stresses of copper dual-damascene interconnects are calculated by a commercial finite element software in this paper. The analytical work is performed to examine the effects of different low-k （kis permittivity） dielectrics, barrier layer and aspect ratio of via on hydrostatic stress distribution in the copper interconnects. The results of calculation indicate that the hydrostatic stresses are highly non-uniform through-out the copper interconnects and the highest tensile hydrostatic stress exists on the top interface of lower level interconnect near via. Both the high coefficient of thermal expansion and the low elastic modulus of the low-k dielectrics and barrier layer can decrease the highest hydrostatic stress on the top interface, which can improve the reliability of the copper interconnects.

关 键 词：copper dual-damascene interconnects hydrostatic stress stress-induced voiding finite element modeling 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]