基于Preisach的MFIS结构器件C-V模型的改进  

Improvement of C-V Model for Metal-ferroelectric-insulator-semiconductor Structure Device Based on Preisach

作　　者：张俊杰[1] 王希娟[1] 

机构地区：[1]洛阳师范学院物理与电子信息学院,洛阳471022

出　　处：《科学技术与工程》2011年第17期4060-4063,共4页Science Technology and Engineering

摘　　要：考虑历史电场效应,将描述铁电层矫顽电场分布的Preisach模型引入MFIS结构,和传统的MOS结构器件电荷薄片模型结合,对MFIS结构的C-V模型进行改进。为验证模型的有效性,与文献中的实验数据进行比较。结果表明,改进模型能够很好地与实验数据吻合,可以被用来描述MFIS结构器件的C-V特性及记忆窗口。Considering the history-dependent electric field effect,Preisach model which describe the dipole switching is introduced into metal-ferroelectric-insulator-semiconductor（MFIS） structure,and is combined with Charge-sheet model of MOS structure.By this way,the C-V model of MFIS structure is improved.Finally,the improved model is used and compared with the experiment,and simulation results show that the improved model can predict the C-V characteristic and memory window of MFIS structure more consistently with the experimental data.

关 键 词：铁电 金属铁电绝缘半导体(Metal-Ferroelectrie-insulator-Semiconluctor) MFIS C-V 记忆窗口 

分 类 号：TM271[一般工业技术—材料科学与工程]