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机构地区:[1]National ASIC System Engineering Research Center,Southeast University
出 处:《Journal of Semiconductors》2011年第6期27-32,共6页半导体学报(英文版)
基 金:Project supported by the Natural Science Foundation of Jiangsu Province,China(NoBK2008287);the Advanced Research of National Natural Science Foundation of Southeast University,China(NoXJ2008312)
摘 要:A sub-circuit SPICE model of a MOSFET for low temperature operation is presented.Two resistors are introduced for the freeze-out effect,and the explicit behavioral models are developed for them.The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures.A sub-circuit SPICE model of a MOSFET for low temperature operation is presented.Two resistors are introduced for the freeze-out effect,and the explicit behavioral models are developed for them.The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures.
关 键 词:SPICE model low temperature SUB-CIRCUIT freeze-out effect voltage control resistor
分 类 号:TN432[电子电信—微电子学与固体电子学]
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