Characterization of a room temperature terahertz detector based on a GaN/AlGaN HEMT  

作　　者：周宇 孙建东 孙云飞 张志鹏 林文魁 刘宏欣 曾春红 陆敏 蔡勇 吴东岷 楼柿涛 秦华 张宝顺 

机构地区：[1]Key Laboratory of Nanodevices,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第6期40-43,共4页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(NoG2009CB929300);the Knowledge Innovation Program of the Chinese Academy of Sciences(NoY0BAQ31001);the National Natural Science Foundation of China(No60871077)

摘　　要：We report on the characterization of a room temperature terahertz detector based on a GaN/AlGaN high electron mobility transistor integrated with three patch antennas.Experimental results prove that both horizontal and perpendicular electric fields are induced in the electron channel.A photocurrent is generated when the electron channel is strongly modulated by the gate voltage.Despite the large channel length and gate-source/drain distance, significant horizontal and perpendicular fields are achieved.The device is well described by the self-mixing of terahertz fields in the electron channel.The noise-equivalent power and responsivity are estimated to be 100 nW/（Hz）^（1/2） and 3 mA/ W at 292 K,respectively.No decrease in responsivity is observed up to a modulation frequency of 5 kHz. The detector performance can be further improved by engineering the source-gate-drain geometry to enhance the nonlinearity.We report on the characterization of a room temperature terahertz detector based on a GaN/AlGaN high electron mobility transistor integrated with three patch antennas.Experimental results prove that both horizontal and perpendicular electric fields are induced in the electron channel.A photocurrent is generated when the electron channel is strongly modulated by the gate voltage.Despite the large channel length and gate-source/drain distance, significant horizontal and perpendicular fields are achieved.The device is well described by the self-mixing of terahertz fields in the electron channel.The noise-equivalent power and responsivity are estimated to be 100 nW/（Hz）^（1/2） and 3 mA/ W at 292 K,respectively.No decrease in responsivity is observed up to a modulation frequency of 5 kHz. The detector performance can be further improved by engineering the source-gate-drain geometry to enhance the nonlinearity.

关 键 词：terahertz detector high electron mobility transistor MIXING two-dimensional electron gas 

分 类 号：O572.212[理学—粒子物理与原子核物理]