移动加热器法晶体生长的研究  

Study of Single Crystal Growth by the Travelling Heater Method

作　　者：李其松[1] 刘俊成[1] 

机构地区：[1]山东理工大学材料科学与工程学院,淄博255049

出　　处：《材料导报》2011年第11期11-15,20,共6页Materials Reports

基　　金：国家自然科学基金(50972085)

摘　　要：介绍了移动加热器法晶体生长的基本原理及其优缺点,报道了国内外最新研究进展,讨论了不同工艺参数,如磁场、加速坩埚旋转、重力、生长速度、温度等对THM生长晶体的影响,提出了提高THM生长晶体速度的设想,并就未来THM生长晶体的研究方法和发展趋势提出了自己的看法。The basic principles of single crystal growth by the travelling heater method（THM）, as well as itsadvantages and disadvantages are introduced. The latest progress is also reported. The influences of different process parameters are discussed on crystal quality prepared by THM, such as magnetic field, ACRT（Accelerated crucible ro- tation technique）, gravitational field, growth velocity, temperature and so on. Views on how to increase crystal growth velocity, the research methods and development tendency of THM in the future are also giver~

关 键 词：晶体生长 移动加热器法 磁场 加速坩埚旋转 重力 

分 类 号：O782[理学—晶体学]