漏光波导机制四元系半导体激光器  

Quaternary Semiconductor Lasers with Leaky Waveguide Mechanism

作　　者：晏长岭[1] 钟景昌[2] 

机构地区：[1]中国科学院长春物理研究所,长春130023 [2]长春光学精密机械学院国家重点实验室,长春130022

出　　处：《中国激光》1999年第9期785-789,共5页Chinese Journal of Lasers

摘　　要：给出了漏光波导机制在四元系长波长半导体激光器中的一个应用实例。从理论上证明了漏光波导机制在四元系半导体材料中应用的可行性，并设计了相应结构的激光器件；然后由LPE技术获得这一器件。实践证明，理论和实验结果符合得很好。A practical application of leaky waveguide mechanism in quaternary longwavelength semiconductor lasers is given in this paper. It theoretically describes thepossibility for application of the leaky waveguide mechanism in the quaternarysemiconductor materials and the semiconductor long- wavelength laser devices with therelated structure are designed. The devices are then grown by LPE technique. It shows thatthe theory and experiments agree well with each other. Therefore, the leaky waveguidemechanism is used in the semiconductor long- wavelength lasers theoretically andexperimentally. This is a successful effort for the further applications of the leakywaveguide mechanism in other kinds of semiconductor lasers.

关 键 词：半导体激光器 漏光波导 四元系 长波长 LPE 

分 类 号：TN248.4[电子电信—物理电子学]