Ku波段单片功率放大器设计与制作  

Design and Fabrication of Ku-Band Monolithic Power Amplifier

作　　者：刘如青[1] 吴洪江[1] 高学邦[1] 付兴昌[1] 倪涛[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2011年第6期470-473,共4页Semiconductor Technology

摘　　要：介绍了一种Ku波段GaAs功率放大器芯片的研制过程。芯片采用电抗匹配电路结构,三级级联放大,末级采用多胞器件进行功率合成,实现了电路的高增益和所要求的功率输出;另外,还对元器件模型技术、GaAsMM IC测试技术等进行了相应描述。在芯片的研制过程中,利用ADS软件进行仿真及优化,利用电磁场仿真进行版图设计。在4英寸(100 mm)0.25μmGaAs PHEMT工艺线上完成芯片制作,在12.5～15.0 GHz的频率范围内,脉冲饱和输出功率Po大于34.7 dBm(脉宽100μs,占空比10%),功率增益Gp大于19.7 dB,功率附加效率PAE大于30%,功率增益平坦度小于±0.4 dB。该芯片可以应用到许多微波系统中。The research process of a Ku-band power GaAs MMIC was introduced.The structure of reactively matching network was introduced to realize a power MMIC.Good performance of high gain and high output power was achieved by a power combination technique using a three-stage amplifier.Also some key technologies were described,such as the modeling and testing technologies of GaAs MMIC.During the research and development process,the measurement system was built up,and the circuit was simulated by ADS.After that,the layout was designed with EM simulation.The chip was fabricated at the 4 inch（100 mm） 0.25 μm GaAs power PHEMT process line.The performance of the power amplifier is higher than 34.7 dBm saturated output power（pulse width of 100 μs,duty cycle of 10%）,more than 19.7 dB power gain,30% power-added efficiency and ±0.4 dB gain flatness from 12.5 GHz to 15.0 GHz.The MMIC can be used in many microwave applications.

关 键 词：KU波段 功率放大器 脉冲 芯片 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学] TN722.75