近中红外探测器增透研究  

ANTI REFLECTIVE COATINGS USED IN NEAR INFRARED AND MID INFARED DETECTORS

作　　者：杨天河[1] 沈军[1] 张会林[1] 张勤远[1] 王珏[1] 张勤耀[2] 

机构地区：[1]同济大学波耳固体物理研究所,上海200092 [2]中国科学院上海技术物理研究所,上海200083

出　　处：《红外与毫米波学报》1999年第5期402-406,共5页Journal of Infrared and Millimeter Waves

基　　金：国家863 高技术项目

摘　　要：为提高以ＧａＡｓ 为基底的中红外探测器的综合性能，从理论上验证了在ＧａＡｓ 基底上镀ＴｉＯ２ ｓｏｌ－ｇｅｌ纳米颗粒膜能够较大幅度地提高ＧａＡｓ 红外透过率，并在实验中获得了适合于镀膜的稳定ＴｉＯ２ 纳米颗粒溶胶，有效控制镀膜工艺参数，在ＧａＡｓ 基底上成功地镀上了合适的ＴｉＯ２ｓｏｌ－ｇｅｌ膜，实现了增透效果，在２．５～６．０μｍ 波段内，透射比的最大值由未镀膜的５６％ 提高到镀膜后的９４％ ．In GaAs based infrared detectors, a considerable part of the incident light will be reflected at the incident surface, this may decrease the detector’s sensitivity. In order to improve the sensitivity of the detector, an anti reflective coating was used to reduce such reflection. In this paper a stable solution of TiO 2 nanometer particales was prepared by sol gel method and then used to coat the GaAs substrate. The optical parameters of the coating were successfully controlled, and it was proved that the coating can greatly improve the transmittance of the infrared ray, just as the result of theoretical calculation. In the 2.5—6.0μm waveband, the maximum transmittance of GaAs substrate is 56%, while that of GaAs with nanostructured TiO 2 coating is increased to 94%.

关 键 词：红外探测器 增透 sol-gel膜 近中红外探测器 

分 类 号：TN215[电子电信—物理电子学]