多孔硅发光峰温度行为的研究  

INVESTIGATION OF TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE PEAKS IN POROUS SILICON

作　　者：李清山[1] 马玉蓉[2] 方容川[2] 

机构地区：[1]曲阜师范大学物理系,山东曲阜273165 [2]中国科学技术大学物理系,安徽合肥230026

出　　处：《发光学报》1999年第3期265-269,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金

摘　　要：实验研究了多孔硅（Ｐｏｒｏｕｓ Ｓｉｌｉｃｏｎ）光致发光峰随测量温度的变化，发现发光峰位随温度的移动与发光峰的能量有关． 随温度升高， 发光峰波长较长的样品它们的发光峰都移向高能， 而发光峰能量较高的样品它们的发光峰都移向低能， 发光峰波长位于７４０ｎｍ 附近的样品， 它们的发光峰与测量温度无关． 对上述结果的起源作了讨论．The temperature dependence of photoluminescence (PL) peak in porous silicon is investigated. It was found that the PL peak shift is only dependent on measurement temperature. As increasing temperature, the peaks of PL from the specimens whose peak wavelengths are longer shift to higher energy, the peaks of PL from the specimens whose peak wavelengths are shorter shift to lower energy, and the peaks of PL from the specimens whose wavelengths are located to 740nm are independent of temperature. The PL origin is discussed in terms of a new model.

关 键 词：多孔硅 光致发光 发光模型 发光峰 温度 

分 类 号：TN304.12[电子电信—物理电子学] O482.31[理学—固体物理]