MOSFET栅氧泄漏隧穿电流的分析模型:量子力学研究(英文)  

Analytical Modeling for Gate Oxide LeakageTunneling Current in a MOSFET:A Quantum Mechanical Study

作　　者：Amit Chaudhry Jatindra Nath Roy 

机构地区：[1]旁遮普大学工程与技术学院,印度昌迪加尔91160014 [2]Solar Semiconductor有限公司,印度海得拉巴501359

出　　处：《微纳电子技术》2011年第6期357-364,共8页Micronanoelectronic Technology

摘　　要：研发了一种通过MOSFET的超薄栅氧化物分析直接隧穿电流密度的模型。采用Wentzel-Kramers-Brilliouin(WKB)近似计算了隧穿概率,利用清晰的表面势方程改进模型的准确性。在研究模型中考虑了Si衬底中反型层的量子化和多晶硅栅耗尽,还研究了多晶硅掺杂对栅氧化层隧穿电流的影响。仿真结果表明,栅氧化层隧穿电流随多晶硅栅掺杂浓度的增加而增加。该结论与已报道的结果相吻合,从而证明了该模型的正确性。An analytical model was developed for the direct tunneling current density through anultrathin gate oxide in a metal-oxide-semiconductor field-effect transistor（MOSFET）.The tun-neling probability was calculated using Wentzel-Kramers-Brilliouin（WKB） approxi mation.Theexplicit surface potential equations were used in the model to i mprove its accuracy.Both inver-sion layer quantizationin the silicon substrate and poly silicon depletioninthe gate wereincludedin the developed overall model.The effect of poly silicon doping onthe gate oxide tunneling cur-rents was also studied.Si mulation results show that the gate oxide tunneling current densityincreases with the increase of the dopingin poly silicon gate.The results obtained match closelywith the established results reportedin the literature,thus proving the validity of the model.

关 键 词：反型层量子化 隧穿模型 Wentzel-Kramers-Brilliouin(WKB)近似 多晶硅栅 金属氧化物半导体场效应晶体管(MOSFET) 

分 类 号：TN386.1[电子电信—物理电子学]