双层掺混结构CNT薄膜的制备及场发射性能  

Fabrication and Field Emission Properties of CNT Thin Films with the Bilayer Mixing Structure

作　　者：商世广[1] 赵玲[1] 高明琪[2] 刘卫华[2] 赵萍[1] 

机构地区：[1]西安邮电学院电子工程学院,西安710121 [2]西安交通大学电子与信息工程学院,西安710049

出　　处：《微纳电子技术》2011年第6期365-369,394,共6页Micronanoelectronic Technology

基　　金：西安应用材料创新基金资助项目(XA-AM-201004);陕西省教育厅资助项目(2010JK822)

摘　　要：针对单层掺混结构改善丝网印刷碳纳米管(CNT)薄膜场发射性能的局限性,提出了一种能有效改善CNT薄膜场发射性能的双层掺混结构。相比传统单层掺混结构的CNT阴极薄膜,双层掺混薄膜中上层TiO2介质掺混结构能有效提高CNT的增强因子,下层导电纳米钛粉掺混结构能降低CNT与衬底电极间的接触电阻、提高CNT导电网络的电子传输能力。场发射I-V特性测试表明,当CNT和钛的掺混质量比为1∶1且氮气中预烧温度为450℃时,双层掺混结构CNT薄膜的开启场强为1.53V/μm,电流密度在场强为2.0V/μm时达79.5μA/cm2。该方法为改善丝网印刷CNT薄膜的场发射性能提供了一种可行方案。To solve the limitation of the monolayer mixing structure for improving the field emission performance of screen-printed carbon nanotube（CNT）thin films,a novel bilayer mixing structure was presented to effectively enhance the field emission property.Compared to the conventional monolayer mixing structure,the bilayer mixing structure has some advantages as follows.The upper layer with mixing dielectric titanium dioxide could effectively increase the enhancement factor of the CNT,and the lower layer with mixing conductive nano titanium powder could decrease the contact resistance between CNTs and substrate and improve the electronic transmission performance of the conductive network for CNTs.The I-V characteristic test of the field emission indicates that the turn-on electric field of the CNT film is 1.53 V/μm with the pre-sintering temperature of 450 ℃ in nitrogen and the mass mixing ratio of 1∶1,and the current density reaches 79.5 μA/cm2 with the electric field of 2.0 V/μm.This method provides a feasible scheme to enhance the field emission properties of screen-printed CNT thin films.

关 键 词：碳纳米管 丝网印刷 双层掺混 场发射 阴极薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程]