Si基稀土Er_2O_3薄膜材料特性及制备研究进展  

Research Progress in the Material Characteristics and Fabrication of Si-Based Rare-Earth Er_2O_3 Films

作　　者：陈长春[1] 刘江峰[1] 余本海[1] 王林[1] 

机构地区：[1]信阳师范学院物理电子工程学院,河南信阳464000

出　　处：《微纳电子技术》2011年第6期370-375,共6页Micronanoelectronic Technology

基　　金：河南省科技计划资助项目(082300410050)

摘　　要：Si基Er2O3薄膜材料具有带隙宽、k值高等特点,在微电子和光电子领域具有潜在的应用价值。首先,阐述了Si基Er2O3薄膜材料的晶体结构具有多态现象,而立方晶形的Er2O3具有方铁锰矿立方结构,易制成高度择优取向的薄膜甚至单晶膜。其次,介绍了利用X射线光电子谱(XPS)技术确定Er2O3和Si两种材料的价带和导带偏移及采用光电子谱来确定高k介质材料能带带隙。此外,还介绍了Si基Er2O3薄膜材料光学常数的测试方法及其光谱转换特性,可用于太阳光伏电池。最后,着重介绍了国内外Si基Er2O3薄膜材料制备方面的最新研究进展,并指出金属有机物化学气相淀积(MOCVD)是未来产业化制备Si基Er2O3薄膜材料的理想选择。Si-based Er2O3 thin film is of wide band-gap and high k,and can be applied in the fields of microelectronic and optoelectronic industry.Firstly,it is described that the crystal structure of the Si-based Er2O3 film materials is of polymorphism,while the cubic crystalline Er2O3 is with the cubic structure of the bixbyite,and is easily fabricated into the highly preferred orientation film even the single crystal film.Secondly,it is introduced that the valence band and conduction band migration of Er2O3 and Si are determined with the X-ray photoelectron spectroscopy（XPS） technology,and the energy band gap of the high k dielectric material is determined with the light electronic spectrum.In addition,the test method of optical constants for the Si-based Er2O3 film and its spectrum transfer characteristics are given,thus the film can be used for solar photovoltaic cells.Finally,the latest progress of the preparation in Si-based Er2O3 films both at home and abroad is presented especially,and it is pointed out that the metal organic chemical vapor deposition（MOCVD） is the ideal choice for industrialization preparation of Si-based Er2O3 films in the future.

关 键 词：Si基Er2O3薄膜 能带带隙 X射线光电子谱(XPS) 光学常数 金属有机物化学气相淀积(MOCVD) 

分 类 号：TN304.3[电子电信—物理电子学]