SiO_2-GeO_2薄膜电场极化后倍频效率与极化电压的超平方关系  

THE SUPER\|QUADRATIC RELATION BETWEEN FREQUENCY DOUBLING EFFICIENCY AND POLING VOLTAGE IN SiO\-2\|GeO\-2 THIN FILMS 

作　　者：徐志凌[1] 刘丽英[1] 杨鹏[1] 侯占佳[1] 徐雷[1] 王文澄[1] 

机构地区：[1]复旦大学三束材料改性国家重点实验室,物理系上海200433

出　　处：《物理学报》1999年第11期2076-2081,共6页Acta Physica Sinica

基　　金：国家自然科学基金;国家攀登计划资助

摘　　要：采用溶胶凝胶方法制备了 Ｓｉ Ｏ２ Ｇｅ Ｏ２ 薄膜．通过对薄膜样品平板电极极化和电晕极化后二次谐波产生信号的研究，发现样品中有效偶极子数目随平板电极极化电压的增加而逐渐增大．提出了有效偶极子释放模型，解释了样品倍频效率与极化电压之间的超平方关系．Sol\|gel method was used to prepare SiO\-2\|GeO\-2 films. By investigating the second\|harmonic generation signal of the film after parallel plate poling and corona poling, it was found that the number of effective dipoles in the sample increased with the plate poling voltage. A model of the release of effective dipoles was proposed to explain the super\|quadratic relation between the second\|order nonlinearity and the poling voltage. PACC: 4265K; 7865; 8120P

关 键 词：薄膜 氧化硅 氧化锗 倍频效率 极化电压 

分 类 号：O484.42[理学—固体物理]