Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches  

作　　者：刘红 王静荔 张琳 忻斌杰 王馨梅 施卫 

机构地区：[1]Faculty of Automation and Information Engineering,Xi’an University of Technology [2]State Key Laboratory of Electrical Insulation and Power Equipment,Xi’an Jiaotong University

出　　处：《Chinese Optics Letters》2011年第6期104-106,共3页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Nos. 50837005 and 10876026);the Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment (No. EIPE09203);the National Basic Research Program of China (No.2007CB310406)

摘　　要：Photoconductive semiconductor switches （PCSSs） are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.Photoconductive semiconductor switches （PCSSs） are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.

关 键 词：Electric switchgear Gallium alloys JITTER Photoconducting devices PHOTOCONDUCTIVITY Semiconducting gallium Semiconductor switches 

分 类 号：TM564[电气工程—电器]