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机构地区:[1]上海交通大学应用化学系
出 处:《物理化学学报》1990年第5期638-640,共3页Acta Physico-Chimica Sinica
基 金:国家自然科学基金
摘 要:半导体盘金属环旋转环盘电极在光强阶跃下环电流暂态技术的研究在文献上尚较少报道,Franco Decker对SrTiO_3进行了半定量研究,本文研究了n-InP电极,并对实验结果进行了定量处理及讨论. 实验部分实验装置如图1所示,半导体电极为n-InP[(100)面,N_0=2×10^(17)cm^(-3)],环用金,盘半径R_1,环内径R_2及外径R_3用读数显微镜测定,其值分别为3.76±0.2mm,4.24±0.04mm及6.05±0.06mm.溶液为0.101mol·L^(-1)K_4Fe(CN)_6。The transient ring currents of the RRDE n-InP semiconductor disk-gold ringirradiated with a light step from dark to 25 mW.cm^(-2) with the seven different rota-tion speeds between 590 and 7000 r. p. m. in 0.101 mol·L^(-1) K_4Fe(CN)_6 have beenstudied Experimental data were fitted by the computer.The diffusion coefficient of[Fe(CN)_6]^(3-) ion found is D = 3.3×10^(-6) em^2·s^(-1) and the theoratical collection ef-ficiency calculated for thin-gap and thin-ring RRDE is N = 0.20 these are in goodagreement with the literature The experimental value of ωτ_0 agree with the theora-tical value. The agreement between the experiment and the theory suggests that the electrodereaction on n-InP is a simple photoelectro-chemical reaction, i. e. [Fe(CN)_6]~)(4-) + h^+ →[Fe(CO)_6]^(3-).
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