氮化铝陶瓷生产关键技术研究现状  

Research status of AlN ceramics production technology

作　　者：高晓菊[1] 李国斌[1] 赵斌[1] 刘国玺[1] 常永威[1] 乔光利[1] 韩剑锋[1] 顾明俊[1] 

机构地区：[1]中国兵器科学研究院宁波分院,浙江宁波315103

出　　处：《兵器材料科学与工程》2011年第3期92-96,共5页Ordnance Material Science and Engineering

基　　金：国际科技合作项目(2008DFR50390)

摘　　要：氮化铝(AlN)陶瓷具有热导率高、热膨胀系数低、电阻率高等特性以及良好的力学性能,被认为是新一代高性能陶瓷基片和封装的首选材料。总结氮化铝陶瓷生产化的控制因素,分别从粉体的制备、防水化能力、成型过程、低温烧结以及应用等几个方面加以论述,并提出氮化铝陶瓷今后批量化生产过程中工艺技术的发展方向。Aluminum nitride （A1N） has attracted much attention as advanced electronic packaging material and ceramic substrates due to its remarkable properties, including high thermal conductivity, low thermal expansion coefficient, high electrical resistivity and good mechanical property. In this article, the limiting factors of aluminum nitride ceramic in production were summarized. The powder preparation, waterproof ability, the molding process, low temperature sintering and the application etc. were discussed in detail. The development direction of alumina nitride ceramics was listed in the end.

关 键 词：氮化铝粉体 防水化能力 氮化铝成型 烧结 

分 类 号：TQ174.75[化学工程—陶瓷工业]