n-Ge常温反常Hall效应机理实验  

EXPERIMENTAL INVESTIGATION MECHANISM ANOMALOUS HALL EFFECT OF n-Ge ABOVE ROOM TEMPERATURE

作　　者：邢旭[1] 

机构地区：[1]东北师范大学物理系,长春130024

出　　处：《物理学报》1990年第4期614-619,共6页Acta Physica Sinica

摘　　要：自常温反常电磁特性发现以来,人们用反型层模型对常温反常Hall效应进行了成功的理论探讨,但至今这种模型还未得到实验的验证。本文将报道我们在这方面的工作。Since the discovery of specific anomalous electromagnetic character of n-Ge above room temperature, the inversion layer model has been very successful in theoretical investigation of anomalous Hall effect. However, up to now this model has not been verified experimentally. This paper reports this aspect of work.

关 键 词：Ge 反常 Hall效应 常温 

分 类 号：TN304.11[电子电信—物理电子学]