一种基于SiGe工艺的ECL环形振荡器  

An ECL Ring Oscillator Based on SiGe Process

作　　者：何峥嵘[1] 向飞[1] 谭开洲[2] 肖伟[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路重点实验室,重庆400060

出　　处：《微电子学》2011年第3期377-380,共4页Microelectronics

基　　金：模拟集成电路重点实验室基金资助项目"SiGe亚微米双层多晶硅自对准结构及工艺研究"(9140C0902040803)

摘　　要：介绍了一种基于SiGe平面集成电路工艺制作的ECL环形振荡器,采用15级反相器闭环结构,能够产生280 MHz高频振荡信号,振荡周期为3.58 ns,平均每级反相器延迟为119 ps。该电路结构简单、易集成、成本低,可广泛移植于各类片上系统,用作时钟信号源等。An ECL ring oscillator fabricated in SiGe-based planar IC process was presented,in which a closed-loop architecture of 15-stage phase inverter was used.The oscillator could generate a 280 MHz high frequency oscillating signal with an oscillation period of 3.58 ns,in which the average delay of each phase inverter was 119 ps.The circuit features simple architecture,easy integration and low cost,and it can be used in various SOC for clock signal source,etc.

关 键 词：SIGE ECL 环形振荡器 反相器 

分 类 号：TN752[电子电信—电路与系统]