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作 者:黄霞[1,2,3] 姚金城[1,2,3] 常爱民[1,3] 刘力[1] 彭昌文[1,2,3]
机构地区:[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011 [2]中国科学院研究生院,北京100039 [3]新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011
出 处:《电子元件与材料》2011年第7期25-28,共4页Electronic Components And Materials
基 金:新疆自然科学基金资助项目(No.2010211A59)
摘 要:采用传统固相法制备了Co1.5–xMn1.2Ni0.3AlxO4(x=0,0.02,0.04,0.06)NTC热敏电阻材料。借助XRD、SEM和几种电性能测试手段,研究了Al2O3掺杂对MnCoNi热敏电阻材料相结构及电性能的影响。结果表明:随着Al2O3掺杂量的增加,MnCoNi热敏电阻材料的晶体结构不变,晶粒减小,电阻率和材料常数B值由339.07Ω·cm、3489.07K分别增加到3723.89Ω·cm、3956.80K,电学稳定性由1.65%提高至0.17%。Co1.5-xMn1.2Ni0.3AlxO4(x= 0,0.02,0.04,0.06) NTC thermistor materials were prepared by the traditional solid-state reaction method.The effects of Al2O3 doping on the microstructure and electric properties of prepared materials were studied through XRD,SEM and several instruments for electrical properties characterization.The results indicate that Al2O3 doping shows little effect on the crystal structure of prepared materials.However,with increasing Al2O3 content,the grain size of the MnCoNi thermistor materials decreases,while the resistivity,material constant B value and electrical stability increase from 339.07 Ω·cm,3 489.07 K and 1.65% to 3 723.89 Ω·cm,3 956.80 K and 0.17%,respectively.
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