基于MOCVD法制备的NiO薄膜结构与光学特性  

Structurel and Optical Properties of NiO Films by MOCVD

作　　者：赵洋[1] 赵龙[1] 王辉[1,2] 汤正新[2] 王瑾[1] 史志峰[1] 

机构地区：[1]吉林大学电子科学与工程学院,吉林长春130023 [2]河南科技大学物理与工程学院,河南洛阳471003

出　　处：《河南科技大学学报（自然科学版）》2011年第3期9-11,108,共3页Journal of Henan University of Science And Technology:Natural Science

基　　金：国家自然科学基金项目(60877020;60976010);河南科技大学人才科学基金项目(13490034);河南科技大学青年基金项目(13490045)

摘　　要：用金属有机化学气相沉积法在Si衬底上制备了NiO薄膜。分别采用X光电子能谱、电子显微镜、X射线衍射以及紫外-可见分光光度计对样品的结构和光学特性进行测试。X光电子能谱测试结果表明:薄膜中Ni元素以二价态存在,Ni与O比值接近1∶1,表明制备的样品为NiO薄膜;电子显微镜和X射线衍射分析显示NiO薄膜呈现多晶态;紫外-可见分光光度计测试结果显示:NiO薄膜具有高透过率,400 nm附近最高透过率为96%,通过线性外推法作图得到NiO薄膜的禁带宽度在3.7 eV左右。NiO films were grown on Si substrates by metal organic chemical vapor deposition(MOCVD).The films were characterized by scanning electron microscopy,X-ray photoelectron spectroscopy,X-ray diffraction and U-V measurements.XPS showed that the doped Ni of the sample exists in the form of Ni+2 and the Ni∶O ratio is about 1∶1.SEM and XRD showed the sample deposited is NiO films and polycrystalline.U-V spectrophotometer measurements demonstrated that the sample has high transmittance and the maximum transmittance obtained in this study is 96% at 400 nm.The band gap is determined to be about 3.7 eV by extrapolating the linear portion of the plot to the energy axis.

关 键 词：NiO薄膜 金属有机化学气相沉积法 透射率 

分 类 号：O484.4[理学—固体物理]