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作 者:刘艳芝[1,2] 袁煜[1,2] 吕玲玲[1] 朱元成[1,2] 唐慧安[1,2] 左国防[1,2] 李志锋[1,2]
机构地区:[1]天水师范学院生命科学与化学学院,天水741001 [2]甘肃高校新型分子材料设计与功能省级重点实验室,天水741001
出 处:《Chinese Journal of Chemical Physics》2011年第3期284-294,I0003,共12页化学物理学报(英文)
基 金:This work was supported by the National Natural Science Foundation of China (No.51063006 and No.50975273) and the "QingLan" Talent Engineering Funds of Tianshui Normal University.
摘 要:Inverse halogen bonds interactions involving Br in the electronic deficiency systems of CH3+...Br-Y (Y=H, CCH, CN, NC) have been investigated by B3LYP/6- 311++G(d, p) and MP2/6-311++G(d, p) methods. The calculated interaction energies with basis set super-position error correction of the four IXBs complexes are 218.87, 219.48, 159.18, and 143.05kJ/mol (MP2/6-311++G(d, p)), respectively. The relative stabilities of the four complexes increased in the order: CH3+ … BrCN〈CH3+…- BrNC〈CH3+… BrH≈CH3+ …BrCCH. Natural bond orbital theory analysis and the chemical shifts calculation of the related atoms revealed that the charges flow from Br-Y to CH3e. Here, the Br of Br-Y acts as both a halogen bond donor and an electron donor. Therefore, compared with conventional halogen bonds, the IXBs complexes formed between Br-Y and CH3+. Atoms-in-molecules theory has been used to investigate the topological properties of the critical points of the four IXBs structures which have more covalent content.
关 键 词:CH3+ Electronic deficiency system Inverse halogen bond Electron density topological property
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