铜锌锡硫半导体薄膜材料的制备与表征(英文)  

Preparation of Copper Zinc Tin Sulfide Thin Film Semiconducting Materials

作　　者：史成武[1,2] 史高杨[1,2] 陈柱[1,2] 孙人杰[1,2] 夏梅[1,2] 

机构地区：[1]合肥工业大学化学工程学院,合肥230009 [2]中国科学院新型薄膜太阳电池重点实验室,合肥230031

出　　处：《硅酸盐学报》2011年第7期1108-1111,共4页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51072043);“973”计划重大科学问题导向项目(2011CBA00700);安徽省年度重点科研项目计划(2010AKND0794);合肥工业大学学生创新基金项目(XS2010036,cxsy102084)

摘　　要：采用水热法成功制备了Cu2ZnSnS4(CZTS)半导体材料,通过浸涂法制备了相应的薄膜,并在N2气氛中于400℃对薄膜进行了退火处理。用X射线荧光光谱分析了所得CZTS粉末中各组成元素的含量,并分别用X射线衍射、扫描电子显微镜和紫外-可见-近红外光谱对CZTS薄膜样品的晶体结构、表面形貌和带隙进行了表征。结果表明:所得的CZTS粉末的元素组成为Cu1.90Zn0.94Sn1.00S4.30,符合理论化学计量比,所制备的CZTS薄膜具有良好的结晶度,表面均匀、无裂纹,其直接带隙为1.51 eV,退火后降低到1.34 eV。Cu2ZnSnS4（CZTS） semiconducting materials were firstly prepared by a hydrothermal method,and then the thin films were deposited by a dip-coating technique and post-annealed at 400 ℃ in N2 atmosphere.The chemical composition of the CZTS semi-conducting materials was determined by X-ray fluorescence spectrometry.The crystal structures,surface morphology and band gaps of the CZTS thin films were characterized by X-ray diffraction,scanning electron microscope and ultraviolet-visible-near infrared spec-troscope,respectively.The results show that the chemical composition of the CZTS semiconducting materials is Cu1.90Zn0.94Sn1.00S4.30 in the nearly stoichiometric relation,and the CZTS thin films appear superior crystallinity,uniformity and free-cracks.The direct band gap was 1.51 eV,and it decreased to 1.34 eV after annealing.

关 键 词：铜锌锡硫 水热法 薄膜 浸涂法 制备 

分 类 号：TM914[电气工程—电力电子与电力传动]