二极管原理非制冷红外焦平面阵列的集成设计  

Integration of uncooled diode infrared focal plane array

作　　者：王玮冰[1,2] 陈大鹏[1,2] 明安杰[1,2] 欧文[1,2] 刘战峰[1,2] 

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心 [2]中国科学院微电子器件与集成技术重点实验室,北京100029

出　　处：《红外与激光工程》2011年第6期997-1000,共4页Infrared and Laser Engineering

基　　金：国家863计划(2007AA04Z323)

摘　　要：面向非制冷红外成像的低成本高性能应用,二极管原理的红外焦平面阵列的设计和工艺实现得到研究和发展。焦平面和读出电路的设计集成以及CMOS和MEMS工艺集成是此项技术的研究重点。基于SOI的二极管原理焦平面阵列在低成本的利用CMOS工艺实现大规模阵列集成方面有很大的优势。读出电路是基于标准CMOS工艺进行设计的。320×240规模的焦平面阵列利用CMOS标准工艺和MEMS工艺集成已经得到了结构实验结果。研究并测得二极管像元的正向压降的温度变化率约为-1.5 mV/K。分析和实验证明了二极管原理非制冷红外焦平面阵列的设计和工艺可行性,是一项可以低成本广泛应用的红外成像技术。The design and fabrication of uncooled diode infrared focal plane array（FPA） have been developed for the applications of low cost and high performance uncooled infrared imaging technology.The design and integration of FPA and readout integrated circuit（ROIC）,as well as the process integration of CMOS and MEMS are the important parts in the research and development of uncooled diode infrared FPA.Silicon on insulator（SOI） diode FPA takes great advantage of standard CMOS process for large scale array implementation and integration.The design of ROIC was based on standard CMOS process.320×240 diode FPA was fabricated with both of CMOS and MEMS processes,and finally tested with the temperature coefficient of around-1.5 mV/K for diode forward voltage at a constant current bias.Analysis and experiments prove the high feasibility of the design and manufacture of uncooled diode FPA which is a low cost infrared technology in the wide field.

关 键 词：焦平面阵列 红外成像 非制冷 二极管 工艺集成 

分 类 号：TN216[电子电信—物理电子学]