双频带低噪声放大器设计  

Design of a Dual-Band Low Noise Amplifier

作　　者：刘波宇[1] 张万荣 谢红云[1] 金冬月[1] 丁春宝[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电子器件》2011年第3期278-281,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金(60376033;60776051;61006044;61006059);北京市自然基金(4082007)

摘　　要：基于Jazz 0.35μm S iGe工艺,设计了一款能够在1.8 GHz和2.4 GHz不同频段带独立工作的低噪声放大器。放大器使用噪声性能优良的S iGe HBT,采用Cascode结构减少米勒效应的影响。输入电路采用由两次连续的频率变换和电路转换得到的双频滤波电路,输出端用射随器实现50Ω阻抗匹配。结果表明,该低噪声放大器在1.8 GHz和2.4 GHz两个工作频点,S21分别达到30.3 dB和28.3 dB,S22分别为-19 dB和-20 dB,噪声分别为3.42 dB和3.45 dB。Based on Jazz 0.35 μm SiGe process,a SiGe HBT low noise amplifier（LNA）that can operate respectively at two frequencies of 1.8 GHz and 2.4 GHz was designed.The amplifier was composed of SiGe HBTs which has good noise performance.The cascode circuit was used to reduce the Miller effect of transistor.The input match circuit adopted a dual-Band filter circuit that was obtained by frequency transformation and circuit conversion.The output circuit matched 50Ω by emitter-follower.The results showed that when the amplifier operated at dual frequencies of 1.8 GHz and 2.4 GHz,S21 reached-30 dB and-28.3 dB respectively,S22 reached-19 dB and-20 dB,and the noises were 3.42 dB and 3.45 dB.

关 键 词：双频带 频率转换 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统]