稀土掺杂ZnO半导体气敏传感器的性能研究  

Study of the Properties of Rare-Earth Doped ZnO in Semiconductor Gas Sensor

作　　者：王晓平[1] 

机构地区：[1]长沙交通学院基础部,长沙410076

出　　处：《湘潭大学自然科学学报》1999年第4期109-111,共3页Natural Science Journal of Xiangtan University

摘　　要：介绍了一种稀土(Tb2O3) 掺杂ZnO气敏传感器的制作工艺和传感器的性能.其特点是选择性好,工作温度比无稀土掺杂的ZnOIn this paper,we introduce a gas senser mechanic technology of rare earth doped material, including its function.Its feature is good in selection and its working temperature is lower than that of the gas sensor without rareearth material.This new discovery may creat a new thought in the application of rareearth element to sensor.

关 键 词：气敏传感器 稀土 掺杂 半导体 制备 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN389[自动化与计算机技术—控制科学与工程]