Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature  

作　　者：Jingwei Cuo Hui Huang Xiaomin Ren Xin Yan Shiwei Cai Wei Wang Yongqing Huang Qi Wang and Xi 

机构地区：[1]Zhang Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China

出　　处：《Journal of Materials Science & Technology》2011年第6期507-512,共6页材料科学技术（英文版）

基　　金：supported by the National Basic Research Program of China(No.2010CB327600);the Programme of Introducing Talent of Discipline to Universities of China(No.B07005);the National High Technology R&D Program of China(2009AA03Z405, 2009AA03Z417);New Century Excellent Talents in University(NCET-08-0736);Chinese Universities Scientific Fund(BUPT2009RC0409,BUPT2009RC0410)

摘　　要：Vertical zinc blende GaAs/AlGaAs heterostructure nanowires were grown at different temperatures by metalorganic chemical vapor deposition via Au-assisted vapor-liquid-solid mechanism.It was found that radial growth can be enhanced by increasing the growth temperature.The growth of radial heterostructure can be realized at temperature higher than 500℃,while the growth temperature of axial heterostructure is lower than 440℃.The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed.

关 键 词：NANOWIRE GaAs ALGAAS HETEROSTRUCTURE Zinc blende 

分 类 号：TN304.26[电子电信—物理电子学] TN304.2