功率型发光二极管的寿命与失效分析  

Analysis of the Degradation of High Power Light Emitting Diode

作　　者：钱可元[1] 刘洪涛[1,2] 纪春绍[3] 

机构地区：[1]清华大学深圳研究生院半导体照明实验室,广东深圳518055 [2]上海飞机设计研究院,上海200235 [3]山东省肿瘤医院,济南250001

出　　处：《半导体光电》2011年第3期331-335,共5页Semiconductor Optoelectronics

基　　金：国家"863"计划项目(2008AA03A194);广东省发展平板显示产业财政扶持资金项目(20x80902);深圳市产学研和公共科技专项资助项目(08CXY-14;SY200806300244A);深圳市南山区科技研发资金资助项目(2009003)

摘　　要：可靠性是影响发光二极管应用的一个重要因素。对1 W大功率发光二极管分批在不同电流及不同结温下进行试验,分析了电流和结温对功率型发光二极管寿命的影响,应用应力加速模型推测在不同电流或结温条件下发光二极管的寿命,同时研究了试验过程中发光二极管的光电性能的变化,探索其失效机理,为功率型发光二极管的应用提供参考。Reliability plays an important role in the application of light emitting diode.Two life tests are conducted to compare the respective effects of drive current and junction temperature on the lifetime of 1W power LED.Current-accelerated prediction and temperature-accelerated prediction models are introduced to predict the lifetime under other conditions with different drive current or junction temperature.The variation of the photoelectric properties through the experiment is analyzed to find the mechanism of degradation.These results can be reviewed in the application of LED.

关 键 词：功率型发光二极管 可靠性 性能退化 

分 类 号：TN312.8[电子电信—物理电子学]