质子辐射对铌酸锂多功能集成光路器件的影响  

Effects of Proton Radiation on LiNbO_3 Multifunction Integrated Optical Circuit

作　　者：郑德晟[1] 胡红坤[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2011年第3期343-347,共5页Semiconductor Optoelectronics

摘　　要：利用模拟软件SRIM2008计算了质子辐射对铌酸锂多功能集成光路器件(MIOC)的影响,结合质子辐射效应地面模拟试验的结果,分析比较了不同的质子辐射能量和注量对多功能集成光路器件的影响,给出了多功能集成光路器件质子辐射试验的数据和分析,讨论了多功能集成光路器件抗质子辐射的能力。Effects of proton radiation on the performace of LiNbO3 multifunction integrated optical circuit（MIOC） were calculated with software SRIM2008 on computer.Based on the results of ground simulation tests of proton radiation,the effects of proton radiation with different energies and dosages were analyzed omparatively and the experimental data and analysis were presented.The capability of MIOC resisting proton radiation was discussed.

关 键 词：铌酸锂 多功能集成光路器件 质子辐射 SRIM2008 

分 类 号：TN256[电子电信—物理电子学]