掺杂对CdS多晶薄膜电学性能的影响  

Effects of Doping on the Electrical Properties of CdS Polycrystalline Thin Films

作　　者：曾广根[1] 冯良桓[1] 蔡亚平[1] 黎兵[1] 郑家贵[1] 李卫[1] 武莉莉[1] 雷智[1] 张静全[1] 

机构地区：[1]四川大学太阳能材料与器件研究所,成都610064

出　　处：《半导体光电》2011年第3期356-358,共3页Semiconductor Optoelectronics

基　　金：四川大学青年教师基金资助项目

摘　　要：利用近空间升华法制备CdS多晶薄膜,同时将薄膜在400℃下进行Cl-掺杂。利用光-电阻、暗电阻-温度关系等测试手段分析不同波长光照及温度对掺杂前后薄膜电学性能的影响。结果显示:在不同波长的光照下,薄膜显示出不同的电阻值,最小电阻出现在500 nm波长附近;在光、暗态转换过程中发现,掺杂对电阻弛豫时间影响较大,掺杂后最短响应时间由原来对应的青光向蓝光移动;掺杂后,薄膜光、暗电导增加,电导激活能减少。CdS polycrystalline thin films were prepared by close-space sublimation,and then the films were treated at 400 ℃ for Cl-doping.The electrical properties of CdS before and after doping were studied by analyzing the relationship of light/resistance and dark resistance/ temperature.The results show that,under the lighting with different wavelengths,the films have different resistances,and the minimum resistance appears in the vicinity of 500nm wavelength;in the conversion process of dark and light,the effects of doping on the resistance time relaxation are greater;after doping,the dark conductivity increases while activation energy decreases.

关 键 词：CdS多晶薄膜 电阻 太阳电池 

分 类 号：O484.422[理学—固体物理]