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作 者:CHEN ZiMin ZHENG ZhiYuan XU KunYuan WANG Gang
机构地区:[1]State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,Guangzhou 510275,China [2]School of Physics and Telecommunication Engineering,South China Normal University,Guangzhou 510631,China
出 处:《Chinese Science Bulletin》2011年第21期2206-2209,共4页
基 金:supported by the FOK YING TONG Education Foundation (122004);the Natural Science Foundation of Guangdong Province,China (9451063101002244,10151063101000025)
摘 要:Using the Monte Carlo method,a type of semiconductor nano-device called self-switching device (SSD),which has diode-like I-V characteristics,was simulated.After analyzing the microscopic transport behavior of the carriers,we show that the ballistic effects exist in the SSDs when the channel length of the device is extremely short (~120 nm).Furthermore,we show that the ballistic effect doubles the average drift velocity of the carriers (to ~6.0×107 cm/s) in short-channel SSDs,which decreases the transit time.This implies that when the dimensions are decreased to nanoscale length,the SSD can operate much faster because the ballistic effect increases the operation speed of the device.Moreover,because of the ballistic transport,the energy efficiency may also be improved.Using the Monte Carlo method,a type of semiconductor nano-device called self-switching device (SSD),which has diode-like I-V characteristics,was simulated.After analyzing the microscopic transport behavior of the carriers,we show that the ballistic effects exist in the SSDs when the channel length of the device is extremely short (~120 nm).Furthermore,we show that the ballistic effect doubles the average drift velocity of the carriers (to ~6.0×107 cm/s) in short-channel SSDs,which decreases the transit time.This implies that when the dimensions are decreased to nanoscale length,the SSD can operate much faster because the ballistic effect increases the operation speed of the device.Moreover,because of the ballistic transport,the energy efficiency may also be improved.
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