A 6-GHz ROM suitable for DDFS application in GaAs HBT technology  被引量:1

A 6-GHz ROM suitable for DDFS application in GaAs HBT technology

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作  者:CHEN JianWu WANG Li WU DanYu CHEN GaoPeng JIN Zhi LIU XinYu 

机构地区:[1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [3]Science and Technology Information Research Center,PLA General Armament Department,Beijing 100142,China

出  处:《Chinese Science Bulletin》2011年第21期2291-2296,共6页

基  金:supported by the National Basic Research Program of China (2010CB327505)

摘  要:Read-only memory (ROM) is widely implemented as a phase-to-amplitude mapping block in direct digital frequency synthesizers (DDFS).This paper derives an equivalent model for the ROM in a DDFS to analyze and reduce the access time that is critical to the performance of the DDFS.Moreover,the signal skew observed in the simulation waveform is illustrated.The proposed 64×3-bit ROM is integrated as a part of an 8-bit DDFS,which operates functionally at 6 GHz.Measurement results demonstrate the improvement in the spur free dynamic range.Read-only memory (ROM) is widely implemented as a phase-to-amplitude mapping block in direct digital frequency synthesizers (DDFS).This paper derives an equivalent model for the ROM in a DDFS to analyze and reduce the access time that is critical to the performance of the DDFS.Moreover,the signal skew observed in the simulation waveform is illustrated.The proposed 64×3-bit ROM is integrated as a part of an 8-bit DDFS,which operates functionally at 6 GHz.Measurement results demonstrate the improvement in the spur free dynamic range.

关 键 词:直接数字频率合成器 ROM GHZ GaAs 应用程序 HBT 技术 只读存储器 

分 类 号:TN74[电子电信—电路与系统]

 

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