温压-原位反应法制备C/C-SiC复合材料及其显微结构分析  

Preparation and microstructure of C/C-SiC composites fabricated by warm compressed-in situ reacted process

作　　者：姜四洲[1] 李专[1] 熊翔[1] 肖鹏[1] 

机构地区：[1]中南大学粉末冶金国家重点实验,湖南长沙410083

出　　处：《中南大学学报（自然科学版）》2011年第6期1588-1592,共5页Journal of Central South University:Science and Technology

基　　金：湖南省科技重大专项项目(2009FJ1011-3);中南大学研究生学位论文创新基金资助项目(1960-71131100006)

摘　　要：采用温压-原位反应法制备炭纤维增强炭和碳化硅双基体(C/C-SiC)复合材料,利用X线衍射分析材料组成,并通过扫描电子和透射电子显微镜从不同尺度观察复合材料的微观结构。研究结果表明:硅炭原位反应生成的SiC是面心立方β-SiC,并以多种形态分布在C/C-SiC复合材料中,主要有小颗粒状、圆弧状、多面体形状和不规则形状等;树脂炭基体和SiC基体之间存在非晶界面相,SiC基体的晶面间距约为0.4 nm,并存在大量孪晶,呈现平行分层生长的形貌。Carbon fibre reinforced carbon and silicon carbide dual matrix composites（C/C-SiC） were fabricated by warm compressed-in situ reacted process（WC-ISR）.The microstructure characteristics of C/C-SiC were studied by means of scanning electron microscope and transmission electron microscope in combination with component analysis by X-ray diffraction.The results show that Si reacts with the carbon matrix and then forms β-SiC matrix during in-situ reaction,and with many forms distribution in the C/C-SiC composites,including small granular shape,round campylodromous,polyhedron and anomalous shape and so on.There is incrystal interphase between the resin-carbon matrix and SiC matrix.The average dimension of the interplanar crystal spacin is about 0.4 nm,and there exists a mass of twin crystals which shows parallel laminated growth morphology.

关 键 词：C/C-SIC 温压-原位反应法 显微结构 界面相 

分 类 号：TB331[一般工业技术—材料科学与工程] TH117.3[机械工程—机械设计及理论]