基于dikson charge pump的voltage doubler设计  

Design of Voltage Doubler Based on Dikson Charge Pump

作　　者：盖啸尘[1] 张海良[1] 梅金硕[2] 田洪光 

机构地区：[1]吉林化工学院理学院,吉林132022 [2]哈尔滨理工大学应用科学学院,哈尔滨150080 [3]吉林华微电子股份有限公司,吉林132013

出　　处：《微处理机》2011年第3期13-15,19,共4页Microprocessors

摘　　要：随着集成电路工艺的发展,电源电压不断降低,使得charge pump在芯片上的地位更加重要。传统的voltage doubler基于开关的实现方法,由于MOS管阈值电压的影响,使得voltagedoubler的输出电压与2VDD电平相差甚远。在分析dikson charge pump工作原理的基础上,提出了一种新型的基于dikson charge pump的voltage doubler,通过外加电容的方法,可以实现对diksoncharge pump的输出电压进行微调,从而得到所需要的2VDD的电平。采用smic0.35μm工艺仿真后发现当VDD=5V时,传统的voltage doubler输出电平为8.54V,而dikson voltage doubler的输出电平为理想的10V。With the development of IC technology,supply voltage for IC system has been decreasing making the charge pump become more and more important.Traditional voltage doubler can not have a 2VDD voltage output because the threshold voltage of MOSFET.This paper analyses the working principle of the dikson charge pump,and therefore introduces a new voltage doubler based on dikson charge pump.By adding capacitance,the output voltage of the dikson charge pump can be adjusted subtly.Through simulation,by using smic0.35μm technology,traditional voltage doubler has a 8.54V output comparing the dikson charge pump＇s 10V output.

关 键 词：电荷泵 倍压器 非交叠 

分 类 号：TN432[电子电信—微电子学与固体电子学]