Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime  

作　　者：何红宇 郑学仁 

机构地区：[1]Faculty of Physics and Optoelectronic Engineering,Guangdong University of Technology [2]School of Electronic and Information Engineering,South China University of Technology

出　　处：《Journal of Semiconductors》2011年第7期34-37,共4页半导体学报（英文版）

基　　金：Project supported by the Cadence Design System,Inc.

摘　　要：An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime,assuming an exponential trap states density within the bandgap.Using a charge sheet approximation,the trapped and free charge expressions are calculated,then the surface potential based drain current expression is developed.Moreover,threshold voltage based drain current expressions are presented using the Taylor expansion to the surface potential based drain current expression.The calculated results of the surface potential based and threshold voltage based drain current expressions are compared with experimental data and good agreements are achieved.An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime,assuming an exponential trap states density within the bandgap.Using a charge sheet approximation,the trapped and free charge expressions are calculated,then the surface potential based drain current expression is developed.Moreover,threshold voltage based drain current expressions are presented using the Taylor expansion to the surface potential based drain current expression.The calculated results of the surface potential based and threshold voltage based drain current expressions are compared with experimental data and good agreements are achieved.

关 键 词：amorphous In-Ga-Zn-oxide（a-IGZO） thin-film transistors（TFTs） surface potential threshold voltage trap states 

分 类 号：TN321.5[电子电信—物理电子学] TN386