A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement  

作　　者：陈文锁 张波 方健 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2011年第7期38-41,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61076082,60876053)

摘　　要：A new lateral insulated-gate bipolar transistor with a controlled anode（CA-LIGBT） on silicon-on-insulator （SOI） substrate is reported.Benefiting from both the enhanced conductivity modulation effect and the high resistance controlled electron extracting path,CA-LIGBT has a faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT,which we presented earlier.As the simulation results show,the ratios of figure of merit（FOM） for CA-LIGBT compared to that of 3-D NCA-LIGBT and conventional LIGBT are 1.45：1 and 59.53：1,respectively.And,the new devices can be created by using additional silicon direct bonding（SDB）.So,from the power efficiency point of view,the proposed CA-LIGBT is a promising device for use in power ICs.A new lateral insulated-gate bipolar transistor with a controlled anode（CA-LIGBT） on silicon-on-insulator （SOI） substrate is reported.Benefiting from both the enhanced conductivity modulation effect and the high resistance controlled electron extracting path,CA-LIGBT has a faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT,which we presented earlier.As the simulation results show,the ratios of figure of merit（FOM） for CA-LIGBT compared to that of 3-D NCA-LIGBT and conventional LIGBT are 1.45：1 and 59.53：1,respectively.And,the new devices can be created by using additional silicon direct bonding（SDB）.So,from the power efficiency point of view,the proposed CA-LIGBT is a promising device for use in power ICs.

关 键 词：controlled anode turn-off time forward drop power IC 

分 类 号：TN322.8[电子电信—物理电子学]