Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates  

作　　者：宿世臣 杨孝东 胡灿栋 

机构地区：[1]Key Laboratory of Electroluminescent Devices,Department of Education of Guangdong Province,Institute of Opto-Electronic Materials and Technology,South China Normal University [2]Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics,and Physics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第7期49-51,共3页半导体学报（英文版）

基　　金：Project supported by the Grow Seedlings Project of Guangdong Province,China(No.LYM 10063)

摘　　要：ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si（111） substrates.The nanostructures have preferred orientation along the c axis.The nanostructures are about 10 to 20 nm thick and about 50 nm tall.The planar geometry photoconductive type metal-semiconductor-metal photodetector based on the ZnO nanowall networks exhibits a high and wide response spectrum,and no decrease from 250 to 360 nm.With the applied bias below 5 V,the dark current was below 6μA,and the peak responsivity of 15 A/W was achieved at 360 nm.The UV（360 nm） to visible（450 nm） rejection ratio of around two orders could be extracted from the spectra response.ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si（111） substrates.The nanostructures have preferred orientation along the c axis.The nanostructures are about 10 to 20 nm thick and about 50 nm tall.The planar geometry photoconductive type metal-semiconductor-metal photodetector based on the ZnO nanowall networks exhibits a high and wide response spectrum,and no decrease from 250 to 360 nm.With the applied bias below 5 V,the dark current was below 6μA,and the peak responsivity of 15 A/W was achieved at 360 nm.The UV（360 nm） to visible（450 nm） rejection ratio of around two orders could be extracted from the spectra response.

关 键 词：ZNO DETECTOR MBE 

分 类 号：TN23[电子电信—物理电子学]