布洛赫线存储器稳定性的研究  

Study on the Stability of Bloch Line Memory

作　　者：蔡丽景 顾建军[2] 孙会元[3] 

机构地区：[1]中国联合网络通信有限公司河北省分公司信息化部,石家庄050041 [2]河北民族师范学院教务处,河北承德067000 [3]河北师范大学物理科学与信息工程学院,石家庄050016

出　　处：《东莞理工学院学报》2011年第3期58-61,共4页Journal of Dongguan University of Technology

基　　金：河北省自然科学基金项目(A2009000254);河北师范大学博士基金资助项目(L2006B10)

摘　　要：实验研究了直流偏场和温度交替作用对布洛赫线存储器中垂直布洛赫线(VBL)链的影响。发现三类硬磁畴中VBL链是在临界温度范围[Tl,T2]内解体的,对于三类硬磁畴有着相同的T1,从而进一步证明了温度作用下硬磁畴畴壁中的VBL是逐步解体的,同时也证实了三类硬磁畴的畴壁结构是一致的。畴壁中VBL链开始不稳定的最小临界温度与畴壁中VBL的数目无关,而与VBL间的平衡间距有关。The behavior of VBL in Bloch line Memory subjected to both direct current field and temperature was experimentally studied.We find an interval of critical temperature ,which can make VBL chains breakdown and is related to the parameter of magnetic bubble material.For the three kinds of hard domains,T1 is the same.It proves VBL in hard domains wall breakdown gradually affected by temperature,and it confirmed that the structure in three kinds of hard domains is the same.And this paper concludes that the disappearance of VBL is irrelevant to the amount of VBL,and relevant to the balance space of VBL.

关 键 词：布洛赫线存储器 垂直布洛赫线 热稳定性 

分 类 号：O482.54[一般工业技术—材料科学与工程]