微芯片铝键合点上氟沾污物成分的研究  

Investigation on Fluorine Contamination Components on Al Bondpad of Semiconductor Microchip

作　　者：郑国祥[1] 李越生[1] 梁京 宗祥福[1] 罗俊一 

机构地区：[1]复旦大学材料科学系,上海200433 [2]上海先进半导体制造有限公司,上海200233

出　　处：《固体电子学研究与进展》1999年第3期337-343,共7页Research & Progress of SSE

摘　　要：　微芯片铝键合系统的失效是器件可靠性研究的重要课题，铝键合点上的氟沾污加速了对铝合金化表面的腐蚀，导致微芯片的失效。国外的工作多数讨论氟沾污引起失效的机理；很少给出沾污物的系列化学成份。ＴＯＦＳＩＭＳ提供了一个探测和分析微芯片键合点上沾污成份的有力武器，作者比较了两个ＴＯＦＳＩＭＳ的负离子谱，一个是经目检发现键合点上有沾污斑点的芯片，另一个是键合点无沾污的芯片。根据对ＴＯＦＳＩＭＳ特征谱线和离子像的研究，认为沾污点的化学成份主要是铝氟化合物和铝氧氟化合物。进一步的工作发现除微芯片的制造工艺过程外，成品圆片的存放处理也是形成键合点上氟沾污的原因。The failure study of aluminum bondpad on semiconductor microchip is an important project for device reliability.The fluorine comtamination accelerated corrosion on aluminum surface and induced bondpad failure of microchip. Previous investigations have focused on the failure mechanism induced by fluorine and have not involved the determination of chemical components of contaminator. TOF SIMS provided a powerful tool to determine and analyze the components of contamination on bondpad of microchip. Authors have studied TOF SIMS negative spectra from two kinds of bondpads,with or without contamination spots on bondpad observed by visual inspection. Having studied in details of TOF SIMS spectra and ion images of contaminator,authors found the chemical components of contamination spots are the compounds in the forms of Al x F y and/or Al x F y O z . The further study shows that, besides the manufacturing process of microchip, the storage process of wafer is another important factor which also can cause fluorine contamination on bondpad.

关 键 词：铝键合点 微芯片 氟沾污物 可靠性 

分 类 号：TN306[电子电信—物理电子学]