Bi-Te-Se热电薄膜的电化学沉积  

Electrochemical deposition of Bi-Te-Se thermoelectric thin films

作　　者：任大海[1] 戴震宇[1] 尤政[1] 

机构地区：[1]清华大学精密仪器与机械学系精密测试技术及仪器国家重点实验室,北京100084

出　　处：《功能材料》2011年第7期1261-1264,共4页Journal of Functional Materials

摘　　要：在含有Bi 3+、HTeO2+、Se4+离子的水溶液中通过电化学方法实现了Bi2Te3-ySey热电薄膜沉积,研究了电沉积Bi2Te3-ySey的阴极极化曲线及热电薄膜的生长过程,通过电子显微镜(SEM)和能谱仪(EDS)等手段对热电薄膜进行了形貌、成分分析。结果表明电解液的离子组成、沉积电位对薄膜成分、形貌有较大影响。在-0.07V沉积电位下制备的热电薄膜Bi2Te2.75Se0.95晶粒大小均匀,结构致密。Bi2Te3-ySey thermoelectric films were prepared by electrochemical deposition in the aqueous solution containing Bi3＋,HTeO＋2,Se4＋.Cathodic polarization curves and growth processes of thermoelectric films were studied.The morphology and the composition of the films were analyzed by SEM and EDS.The results indicate that the ions concentration in the aqueous solution and the deposition potential play important roles in controlling the composition of the Bi2Te3-ySey compound.The surface morphology of the film deposited at the potential of-0.07V is comparatively compact,the grain size of the gained thermoelectric films is very uniform,and the composition of the film is Bi2Te2.75Se0.95,which is good thermoelectric film.

关 键 词：热电薄膜 热电转换 电沉积 

分 类 号：TB34[一般工业技术—材料科学与工程] TB33