超声喷雾热解法制备半导体薄膜技术  

Ultrasonic Spray Pyrolysis Technology for Deposition of Semiconductor Thin Films

作　　者：王世凯[1,2] 姜妍彦[1] 唐乃岭[1] 李焕勇[2] 胡志强[1] 

机构地区：[1]大连工业大学化工与材料学院,大连116034 [2]西北工业大学材料科学与工程学院,西安710072

出　　处：《材料导报》2011年第13期70-74,共5页Materials Reports

基　　金：国家863高技术研究发展计划资助项目(2006AA05Z417)

摘　　要：超声喷雾热解法(USP)作为一种新兴的薄膜制备技术,已制备出多种半导体薄膜材料,并成功应用于太阳能电池、传感器、固态氧化物燃料电池等领域。介绍了USP制备薄膜技术的原理,结合近年来USP技术在半导体薄膜制备领域的研究进展,系统阐述了超声喷雾热解法制备薄膜的原理、工艺过程及在此过程中发生的物理化学变化,详细分析了前驱体溶液化学组成、沉积温度、退火处理等各个工艺参数对薄膜沉积过程和成膜质量的影响,指出了该技术目前存在的问题及今后的发展方向。As a new technology for thin-film deposition, USP has been widely applied to deposite a variety of semiconductor thin films and these films are used successfully in various devices such as solar ceils, sensors, and solid oxide fuel cells. The theory and process of USP, especially the physical and chemical changes in deposition process have been introduced comprehensively. Meanwhile, the effects of spray parameters such as the chemical composition of precursor solution, substrate temperature and annealing treatment on the deposition process and film quality has been analyzed in detail. At last, the problems of USP technology existing and the development direction in the future are pointed out.

关 键 词：薄膜 超声喷雾热解 沉积 

分 类 号：TB34[一般工业技术—材料科学与工程]