过渡金属(Mn^(2+)、Ni^(2+)、Fe^(3+)、Cu^(2+))掺杂ZnO基稀磁半导体的制备及性质  

Synthesis and Properties of Transition Metal Doped ZnO Diluted Semiconductor

作　　者：夏川茴[1] 周木[1] 韩向宇[1] 殷鹏飞[1] 

机构地区：[1]重庆交通大学理学院,重庆400074

出　　处：《材料导报》2011年第14期11-15,23,共6页Materials Reports

基　　金：重庆交通大学青年基金(XN(2009)16)

摘　　要：利用溶液腐蚀法制备了Mn2+、Ni2+、Fe3+、Cu2+离子掺杂的ZnO基稀磁半导体。XRD表明掺杂后的ZnO仍然保持单一的纤锌矿结构,没有任何杂质相产生。由紫外-可见光反射谱可知掺杂后吸收边发生了红移。掺杂前ZnO的带隙为3.20eV,对样品分别掺入Mn、Ni、Fe和Cu后的带隙分别为3.19eV、3.15eV、3.08eV和3.17eV。掺杂后样品的室温PL谱除了紫外发射峰外,对于Mn掺杂的样品还在蓝光区域出现了2个分别位于424nm和443nm的发射峰,Fe掺杂的样品出现了一个位于468nm的微弱发射峰,Cu掺杂的样品出现了位于469nm及535nm的很宽的发射峰。室温磁滞回线显示掺杂后样品有明显的铁磁性,掺入Mn、Ni、Fe和Cu样品的剩余磁化强度(Ms)分别为0.3902×10-3emu/cm3、0.454emu/cm3、0.372emu/cm3和0.962×10-3emu/cm3,矫顽力分别为47Oe、115.92Oe、99.33Oe和23Oe。经分析室温铁磁性来源于缺陷调制的Mn2+-Mn2+长程铁磁交换相互作用。The properties of Mn^2＋、Ni^2＋、Fe^3＋、Cu^2＋ doped ZnO nanocrystalline film grown on zinc foil by corrosion-based strategy were investigated. The X-ray photoelectron spectroscopy shows the samples have wurtzite structure and transition metals＇ doping did＇t introduce any impurity. UV-vis spectra exhibit a decrease in the band gap with the data is 3. 20eV, 3. 19eV, 3.15eV, 3. 08eV, 3.17eV for pure ZnO, Mn-ZnO, Ni-ZnO, Fe-ZnO and Cu-ZnO respectively. Except the UV emission peak owing to the band gap of ZnO semiconductor, the photoluminescence spectra show the blue emission peaks centered at 424nm and 443nm for the Mn-doped ZnO film, blue emission peak centered at 468nm for Fe-doped ZnO and centered at 469nm and 535nm for Cu-doped ZnO. The magnetic properties of the Mn, Ni, Fe, Cu-doped ZnO exhibit a room temperature ferromagnetic characteristic with saturation magnetization （Ms） of 0.3902×10^-3emu/cm^3、0.454emu/cm^3、0.372emu/cm^3,0.962×10^-3emu/cm^3 and coercive field of 47Oe, 115.92Oe, 99.33Oe, 23Oe.

关 键 词：ZNO基稀磁半导体 溶液腐蚀法 光学性质 磁性 

分 类 号：TB332[一般工业技术—材料科学与工程]