石墨表面化学气相沉积SiC及C涂层的制备  

Preparation of SiC and C coatings on graphite surface by chemical vapor deposition

作　　者：王春雨[1] 王鑫宇[1] 唐才宇[1] 温广武[1] 

机构地区：[1]哈尔滨工业大学(威海)材料科学与工程学院,山东威海264209

出　　处：《金属热处理》2011年第7期79-83,共5页Heat Treatment of Metals

基　　金：中央高校基本科研业务费专项资金(HIT.NSRIF.2009150)

摘　　要：以C3H8和CH3SiCl3(MTS)为先驱体原料,用化学气相沉积法在石墨基体表面分别制备了C涂层、SiC涂层。采用X射线衍射仪和扫描电镜分析了两种涂层的成分和表面微观形貌,研究了温度和气体流量对涂层微观形貌的影响。结果表明,当C3H8+N2流量为140 L/h,沉积温度为1300℃时,石墨基体表面可获得致密度较高的C涂层,而且涂层比较平整、均匀,而流量为160 L/h时涂层比较粗糙。当MTS+H2流量为60 L/h、沉积温度1100℃时在石墨基体表面可以形成致密的SiC涂层,1300℃时生长的SiC晶体形貌发生改变,涂层厚度增加,表面有较多圆形凸起。当MTS-H2气体流量增大可使SiC涂层晶粒尺寸增大,但大流量易产生涂层剥落。采用C和SiC共沉积涂层作过渡层,涂层与石墨基体界面结合增强;SiC涂层与石墨基体之间存在厚度较大的过渡区域,过渡区域平均厚度约2μm。The C coating and SiC coating were deposited on graphite surface by chemical vapor deposition（CVD）,the C3H8 was employed to deposit C coating,and CH3SiCl3（MTS） was used to deposit SiC coating.The microstructure and phases compounds of the coatings were investigated by scanning electron microscope（SEM） and X-ray diffraction（XRD）.Effects of temperature and gas-flow rate on morphology of the coating were investigated.The results show that the proper temperature of deposition C coating is 1300 ℃.The smooth and uniformity C coating would be obtained with gas-flow rate at 140 L/h,the coarseness coating is to obtain at 160 L/h.The compaction SiC coating is obtained at 1100 ℃.The microstructure of SiC coating is changed at 1300 ℃,thickness of the coating is increasing and circular raised face is obtained at this temperature.It shows that increasing flow could enlarge grain size,but large scale flow would be caused flaking off of SiC coating.The co-deposition C and SiC coatings can be perfect transition layers,the binding between co-deposition coating and graphite substrate is enhanced,SiC coating has better transition layer on graphite surface,and thickness of transition layer is about 2 μm.

关 键 词：化学气相沉积(CVD) 石墨基体 C涂层 SIC涂层 显微组织 

分 类 号：TB303[一般工业技术—材料科学与工程]